2sb834 -3a , -60v pnp plastic-encapsulated transistor elektronische bauelemente 14-aug-2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features power switching applications classification of h fe product-rank 2sb834-o 2SB834-Y range 60~120 100~200 absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -60 v collector to emitter voltage v ceo -60 v emitter to base voltage v ebo -7 v collector current - continuous i c -3 a collector power dissipation p c 2 w thermal resistance, junction to case r jc 4.16 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo -60 - - v i c = -1ma, i e =0 collector to emitter breakdown voltage v (br)ceo -60 - - v i c = -50ma, i b =0 emitter to base breakdown voltage v (br)ebo -7 - - v i e = -1ma, i c =0 collector cut C off current i cbo - - -100 a v cb = -60v, i e =0 emitter cut C off current i ebo - - -100 a v eb = -7v, i c =0 dc current gain h fe 60 - 200 v ce = -5v, i c = -500ma 20 - - v ce = -5v, i c = -3a collector to emitter saturation voltage v ce(sat) - - -1 v i c = -3a, i b = -0.3a base to emitter saturation voltage v be(sat) - - -1 v v ce = -5v, i c = -0.5a transition frequency f t 5 - - mhz v ce = -5v, i c = -500ma, f =1mhz turn-on time t on - 0.7 - s i b1 = -i b2 = -0.2a, i c =2a, v cc =30v storage time t stg - 2 - turn-off time t off - 0.9 - note: 1. pulse test. ito-220j a m j k l l g f b n d e c h ref. millimeter ref. millimeter min. max. min. max. a 14.80 15.60 h 3.00 4.00 b 9.50 10.50 j 0.90 1.50 c 13.00 ref. k 0.50 0.90 d 4.30 4.70 l 2.34 2.74 e 2.50 3.20 m 2.50 2.90 f 2.40 2.90 n 3.5 ref. g 0.30 0.75
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